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TSV912AIDDFR bảng dữ liệu(PDF) 21 Page - Texas Instruments |
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TSV912AIDDFR bảng dữ liệu(HTML) 21 Page - Texas Instruments |
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21 / 58 page ![]() 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 I LOAD (A) C219 F G R Gain 1 R _ _ _ _ OUT MAX OUT MIN IN MAX IN MIN V V Gain V V _ _ SHUNT MAX SHUNT LOAD MAX V 100mV R 100m I 1A : OUT LOAD SHUNT V I R Gain u u 21 TSV911, TSV912, TSV914 www.ti.com SBOS878D – JULY 2017 – REVISED OCTOBER 2019 Product Folder Links: TSV911 TSV912 TSV914 Submit Documentation Feedback Copyright © 2017–2019, Texas Instruments Incorporated Typical Application (continued) 9.2.2 Detailed Design Procedure The transfer function of the circuit in Figure 35 is shown in Equation 1. (1) The load current (ILOAD) produces a voltage drop across the shunt resistor (RSHUNT). The load current is set from 0 A to 1 A. To keep the shunt voltage below 100 mV at maximum load current, the largest shunt resistor is defined using Equation 2. (2) Using Equation 2, RSHUNT is 100 mΩ. The voltage drop produced by ILOAD and RSHUNT is amplified by the TSV91x to produce an output voltage of approximately 0 V to 4.95 V. The gain required by the TSV91x to produce the necessary output voltage is calculated using Equation 3: (3) Using Equation 3, the required gain is calculated to be 49.5 V/V, which is set with resistors RF and RG. Equation 4 is used to size the resistors, RF and RG, to set the gain of the TSV91x to 49.5 V/V. (4) Selecting RF as 165 kΩ and RG as 3.4 kΩ provides a combination that equals roughly 49.5 V/V. Figure 36 shows the measured transfer function of the circuit shown in Figure 35. 9.2.3 Application Curve Figure 36. Low-Side, Current-Sense, Transfer Function |
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