STPSC30G12 datasheet(4/10 Pages) STMICROELECTRONICS

tên linh kiện	STPSC30G12

Giải thích chi tiết về linh kiện	1200 V, 30 A power Schottky high surge silicon carbide diode

PDF	10 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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4 / 10 page

1.1

Characteristics (curves)

Figure 3. Forward voltage drop versus forward current

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(A)

VF(V)

Pulse test : tp=380 µs

Ta=25 °C

Ta=100 °C

Ta=150 °C

Ta=175 °C

Figure 4. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-2

1.E-1

1.E+0

1.E+1

1.E+2

1.E+3

100

200

300

400

500

600

700

800

900

1000

1100 1200

IR(µA)

VR(V)

Tj=25 °C

Tj=100 °C

Tj=150 °C

Tj=175 °C

Figure 5. Peak forward current versus case temperature

100

150

200

250

300

100

125

150

175

IM(A)

TC(°C)

δ=0.1

δ=0.3

δ=0.5

δ=1 δ=0.7

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

500

1000

1500

2000

2500

0.1

1.0

10.0

100.0

1000.0

10000.0

Cj (pF)

VR(V)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

Figure 7. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-5

1.E-4

1.E-3

1.E-2

1.E-1

1.E+0

Zth(j-c)/Rth(j-c)

tp(s)

Single pulse

Figure 8. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

1.E+2

1.E+3

1.E+4

1.E-5

1.E-4

1.E-3

1.E-2

IFSM(A)

tp(s)

Ta=25 °C

Ta=150 °C

STPSC30G12

Characteristics (curves)

DS14115 - Rev 1

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