STTH1506DPI datasheet(1/5 Pages) STMICROELECTRONICS

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STTH1506DPI

October 2003 - Ed: 2A

Tandem 600V HYPERFAST BOOST DIODE

®

The

TURBOSWITCH

“H”

is

an

ultra

high

performance diode composed of two 300V dice in

series. TURBOSWITCH “H” family drastically cuts

losses in the associated MOSFET when run at

high dIF/dt.

DESCRIPTION

s

ESPECIALLY SUITED AS BOOST DIODE IN

CONTINUOUS

MODE

POWER

FACTOR

CORRECTORS

AND

HARD

SWITCHING

CONDITIONS

s

DESIGNED FOR HIGH DI/DT OPERATION.

HYPERFAST

RECOVERY

CURRENT

TO

COMPETE WITH SIC DEVICES. ALLOWS

DOWNSIZING OF MOSFET AND HEATSINKS

s

INTERNAL CERAMIC INSULATED DEVICES

WITH EQUAL THERMAL CONDITIONS FOR

BOTH 300V DIODES

s

INSULATION

(2500VRMS)

ALLOWS

PLACEMENT

ON

SAME

HEATSINK

AS

MOSFET AND FLEXIBLE HEATSINKING ON

COMMON OR SEPARATE HEATSINK

s

STATIC AND DYNAMIC EQUILIBRIUM OF

INTERNAL DIODES ARE WARRANTED BY

DESIGN

s

PACKAGE CAPACITANCE: C=16pF

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

RMS forward current

26

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

130

A

Ipeak

Peak current waveform

δ = 0.15 Tc = 120°C

35

A

Tstg

Storage temperature range

-65 +150

°C

Tj

Maximum operating junction temperature

+ 150

°C

ABSOLUTE RATINGS (limiting values)

IF(AV)

15 A

VRRM

600 V

Tj (max)

150 °C

VF (max)

2.4 V

IRM (typ.)

4.8 A

trr (typ.)

16 ns

MAJOR PRODUCTS CHARACTERISTICS

12

1

2

DOP3I

(insulated)

Số phần tương tự - STTH1506DPI

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STTH1506DPI	72Kb / 5P	Tandem 600V HYPERFAST BOOST DIODE October 2003 - Ed: 2A
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