LM5145 datasheet(4/60 Pages) TI2

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4 Pin Configuration and Functions

Exposed Pad (EP) on

Bottom

Connect to Ground

PGND

VCC

AGND

VIN

FPWM/SYNC

Connect the exposed pad to AGND and PGND on the PCB.

Figure 4-1. 16-Pin RGT Package VQFN (Top View)

Table 4-1. Pin Functions

TYPE(1)

DESCRIPTION

NO.

NAME

VIN

Supply voltage input source for the VCC regulator

Frequency programming pin. A resistor from RT to AGND sets the oscillator frequency between

100kHz and 3.2MHz with DRSS disabled. A resistor from RT to VCC sets the oscillator frequency

between 100kHz and 3.2MHz with DRSS enabled.

FPWM/SYNC

Connect FPWM/SYNC to GND to enable diode emulation mode. Connect FPWM/SYNC to VCC to

operate the LM25139 in forced PWM (FPWM) mode with conduction at light load. FPWM/SYNC

can also be used to synchronize the controller to an external clock. Place the LM25139 into

standby mode by applying an external clock to FPWM/SYNC while EN is low.

AGND

Analog ground connection. Ground return for the internal voltage referenced analog circuits.

COMP

Transconductance error amplifier. Connect the compensation network for COMP to AGND.

Connect FB to VCC to set the output voltage to 3.3V. Connect FB using a 24.9kΩ or 24kΩ to VCC

to set the output voltage to 5V. Install a resistor divider from VOUT to AGND to set the output

voltage set point between 0.8V and 36V. The regulation voltage at FB is 0.8V.

VOUT

Output voltage sense and the current sense amplifiers input. Connect VOUT to the output side of the

current sense resistor.

ISNS

Current sense amplifier input. Connect this pin to the inductor side of the external current sense

resistor.

An open collector output that goes low if VOUT is outside the specified regulation window.

VCC

VCC bias pin. Connect a ceramic capacitor between VCC and PGND.

PGND

Power ground connection pin for the low-side power MOSFET gate driver

Low-side power MOSFET gate driver output

Switch node of the buck regulator and high-side gate driver return. Connect to the bootstrap

capacitor, the source terminal of the high-side MOSFT, and the drain terminal of the low-side

MOSFET.

LM25139

SLVSJ80 – OCTOBER 2025

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