MMBF170 datasheet(2/16 Pages) ONSEMI

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BS170 / MMBF170 Rev. E2

March 2010

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

Absolute Maximum Ratings T

A = 25°C unless otherwise noted

Thermal Characteristics T

A = 25°C unless otherwise noted

Symbol

Parameter

BS170

MMBF170

Units

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage (RGS ≤ 1MΩ)60

VGSS

Gate-Source Voltage

± 20

Drain Current - Continuous

500

- Pulsed

1200

800

TJ, TSTG

Operating and Storage Temperature Range

- 55 to 150

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

°C

Symbol

Parameter

BS170

MMBF170

Units

Maximum Power Dissipation

Derate above 25

°C

830

6.6

300

2.4

mW/

°C

RθJA

Thermal Resistance, Junction to Ambient

150

417

°C/W

TO-92

SOT-23

BS170

MMBF170

Features

■

High density cell design for low RDS(ON).

■

Voltage controlled small signal switch.

■

Rugged and reliable.

■

High saturation current capability.

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