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ADL8124ACPZN-R7 bảng dữ liệu(PDF) 1 Page - Analog Devices |
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ADL8124ACPZN-R7 bảng dữ liệu(HTML) 1 Page - Analog Devices |
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1 / 29 page ![]() Data Sheet ADL8124 1GHz to 20GHz, Low Noise Amplifier with Integrated Temperature Sensor and Enable Function Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. All Analog Devices products contained herein are subject to release and availability. FEATURES ► Single positive supply: 3.3V and IDQ of 55mA ► RBIAS drain current adjustment pin ► Integrated temperature sensor ► Integrated enable and disable function ► Gain: 15dB typical from 10GHz to 17GHz ► OIP3: 29dBm typical from 10GHz to 17 GHz ► Noise figure: 2.1dB typical from 10GHz to 17GHz ► Extended operating temperature range: −55°C to +125°C ► RoHS-compliant, 2mm × 2mm, 8-lead LFCSP APPLICATIONS ► Telecommunications ► Test instrumentation ► Military GENERAL DESCRIPTION The ADL8124 is a highly integrated, 1GHz to 20GHz, low noise am- plifier (LNA). On-chip features include input and output AC coupling capacitors, an integrated bias inductor, an integrated temperature sensor, and an enable or disable pin (VENBL). The typical gain and noise figure are 15dB and 2.1dB, respectively, from 10GHz to 17GHz. The output power for 1dB compression (OP1dB), output third-order intercept (OIP3), and output second-or- der intercept (OIP2) are 15dBm, 29dBm, and 43dBm, respectively, from 10GHz to 17GHz. The quiescent drain current (IDQ), which can be adjusted, is 55mA operating from a 3.3V supply voltage (VDD). Operation at 5V is also supported. The ADL8124 is fabricated on a gallium arsenide (GaAs), pseudo- morphic high electron mobility transistor (pHEMT) process. This device is housed in an RoHS-compliant, 2mm × 2mm, 8-lead LFCSP package and is specified for operation over an extended temperature range of −55°C to +125°C. FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram |
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