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TPA3136AD2PWPR bảng dữ liệu(PDF) 7 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  TPA3136D2, TPA3136AD2 10-W Inductor Free Stereo (BTL) Class-D Audio Amplifier with Ultra Low EMI
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TPA3136D2, TPA3136AD2
www.ti.com
SLOS938F – MAY 2016 – REVISED JANUARY 2020
Product Folder Links: TPA3136D2 TPA3136AD2
Submit Documentation Feedback
Copyright © 2016–2020, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
TPA3136D2,
TPA3136AD2
UNIT
PWP (HTSSOP)
28 PINS
RθJA
Junction-to-ambient thermal resistance
30.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
33.5
°C/W
RθJB
Junction-to-board thermal resistance
17.5
°C/W
ψJT
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
7.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
0.9
°C/W
(1)
Using the TPA3136D2 EVM (SLOU444), unless otherwise noted.
7.5 Electrical Characteristics
TA = 25°C, AVCC = PVCC = 12 V, RL = 6 Ω (unless otherwise noted).
(1) Over operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC CHARACTERISTICS
| VOS |
Class-D output offset voltage (measured
differentially)
VI = 0 V, Gain = 26 dB
1.5
15
mV
ICC
Quiescent supply current
SD = 2 V, no load, 300 ohm Ferrite Bead + 1nF Output
Filter
35
40
mA
ICC(SD)
Quiescent supply current in shutdown mode
SD = 0.8 V, no load
40
60
µA
rDS(on)
Drain-source on-state resistance
IO = 500 mA, TJ = 25°C
Excluding Metal and
Bond Wire Resistance
High Side
240
mΩ
Low side
240
G
Gain
25
26
27
dB
ton
Turn-on time
SD = 2 V
14
ms
tOFF
Turn-off time
SD = 0.8 V
2.5
µs
GVDD
Gate drive supply
IGVDD = 2 mA
6.4
6.9
7.4
V
tDCDET
DC detect time
VRINN = 3.1 V and VRINN = 2.9 V, or VRINN = 2.9 V and
VRINN = 3.1 V
950
ms
AC CHARACTERISTICS
PSRR
Power supply ripple rejection
200-mVPP ripple at 1 kHz,
Gain = 26 dB, Inputs ac-coupled to GND
–65
dB
PO
Continuous output power
THD+N = 10%, f = 1 kHz
10
W
PO
Continuous output power
THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 8 Ω
10
W
PO
Continuous output power, PBTL (mono)
THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 4 Ω
20
W
THD+N
Total harmonic distortion + noise
f = 1 kHz, PO = 5 W (half-power)
0.06%
Vn
Output integrated noise
20 Hz to 22 kHz, A-weighted filter, Gain = 26 dB
91
µV
–81
dBV
Crosstalk
VO = 1 Vrms, Gain = 26 dB, f = 1 kHz
–75
dB
SNR
Signal-to-noise ratio
Maximum output at THD+N < 1%, f = 1 kHz,
Gain = 26 dB, A-weighted
102
dB
OTE
Thermal trip point
150
°C
Thermal hysteresis
15
°C
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
MAX
UNIT
fOSC, SS
Oscillator frequency, Spread Spectrum ON
255
315
355
kHz



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