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TPA3136AD2PWPR bảng dữ liệu(PDF) 7 Page - Texas Instruments |
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TPA3136AD2PWPR bảng dữ liệu(HTML) 7 Page - Texas Instruments |
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7 / 38 page ![]() 7 TPA3136D2, TPA3136AD2 www.ti.com SLOS938F – MAY 2016 – REVISED JANUARY 2020 Product Folder Links: TPA3136D2 TPA3136AD2 Submit Documentation Feedback Copyright © 2016–2020, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPA3136D2, TPA3136AD2 UNIT PWP (HTSSOP) 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W (1) Using the TPA3136D2 EVM (SLOU444), unless otherwise noted. 7.5 Electrical Characteristics TA = 25°C, AVCC = PVCC = 12 V, RL = 6 Ω (unless otherwise noted). (1) Over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC CHARACTERISTICS | VOS | Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 26 dB 1.5 15 mV ICC Quiescent supply current SD = 2 V, no load, 300 ohm Ferrite Bead + 1nF Output Filter 35 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load 40 60 µA rDS(on) Drain-source on-state resistance IO = 500 mA, TJ = 25°C Excluding Metal and Bond Wire Resistance High Side 240 mΩ Low side 240 G Gain 25 26 27 dB ton Turn-on time SD = 2 V 14 ms tOFF Turn-off time SD = 0.8 V 2.5 µs GVDD Gate drive supply IGVDD = 2 mA 6.4 6.9 7.4 V tDCDET DC detect time VRINN = 3.1 V and VRINN = 2.9 V, or VRINN = 2.9 V and VRINN = 3.1 V 950 ms AC CHARACTERISTICS PSRR Power supply ripple rejection 200-mVPP ripple at 1 kHz, Gain = 26 dB, Inputs ac-coupled to GND –65 dB PO Continuous output power THD+N = 10%, f = 1 kHz 10 W PO Continuous output power THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 8 Ω 10 W PO Continuous output power, PBTL (mono) THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 4 Ω 20 W THD+N Total harmonic distortion + noise f = 1 kHz, PO = 5 W (half-power) 0.06% Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 26 dB 91 µV –81 dBV Crosstalk VO = 1 Vrms, Gain = 26 dB, f = 1 kHz –75 dB SNR Signal-to-noise ratio Maximum output at THD+N < 1%, f = 1 kHz, Gain = 26 dB, A-weighted 102 dB OTE Thermal trip point 150 °C Thermal hysteresis 15 °C 7.6 Switching Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER MIN NOM MAX UNIT fOSC, SS Oscillator frequency, Spread Spectrum ON 255 315 355 kHz |
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