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TMP464 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TMP464 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 42 page ![]() 4 TMP464 SBOS835C – MAY 2017 – REVISED OCTOBER 2019 www.ti.com Product Folder Links: TMP464 Submit Documentation Feedback Copyright © 2017–2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Power supply V+ –0.3 6 V Input voltage THERM, THERM2, SDA, SCL, and ADD only –0.3 6 V D1+ through D4+ –0.3 ((V+) + 0.3) and ≤ 6 D– only –0.3 0.3 Input current SDA sink –25 mA All other pins –10 10 Operating temperature –55 150 °C Junction temperature (TJ, maximum) 150 °C Storage temperature, Tstg –60 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), JEDEC specification JESD22-C101(2) ±750 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT V+ Supply voltage 1.7 3.6 V TA Operating free-air temperature –40 125 °C TD Remote junction temperature –55 150 °C 6.4 Thermal Information THERMAL METRIC TMP464 UNIT RGT (VQFN) 16 PINS RθJA Junction-to-ambient thermal resistance 46 °C/W RθJC(top) Junction-to-case (top) thermal resistance 43 °C/W RθJB Junction-to-board thermal resistance 17 °C/W ψJT Junction-to-top characterization parameter 0.8 °C/W ψJB Junction-to-board characterization parameter 5 °C/W |
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