2SC5886

2010-02-05

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5886

High-Speed Swtching Applications

DC-DC Converter Applications

• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)

• Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

• High-speed switching: tf = 55 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

VCEX

80

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

DC

IC

5

Collector current

Pulse

ICP

10

A

Base current

IB

0.5

A

Ta

= 25°C

1

Collector power

dissipation

Tc

= 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)