6.4 Thermal Information (D Package)

THERMAL METRIC(1)

D (SOIC)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

116.5

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

52.8

°C/W

RθJB

Junction-to-board thermal resistance

58.9

°C/W

ΨJT

Junction-to-top characterization parameter

19.4

°C/W

ΨJB

Junction-to-board characterization parameter

58.0

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

6.5 Thermal Information (DWV Package)

THERMAL METRIC(1)

DWV (SOIC)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

102.8

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

45.1

°C/W

RθJB

Junction-to-board thermal resistance

63.0

°C/W

ΨJT

Junction-to-top characterization parameter

14.3

°C/W

ΨJB

Junction-to-board characterization parameter

61.1

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

6.6 Power Ratings

PARAMETER

TEST CONDITIONS

VALUE

UNIT

PD

Maximum power dissipation (both sides)

VDD1 = VDD2 = 5.5V

91

mW

PD1

Maximum power dissipation (high-side)

VDD1 = 5.5V

37

mW

PD2

Maximum power dissipation (low-side)

VDD2 = 5.5V

54

mW

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