6.3 Recommended Operating Conditions

Limits apply over TJ = –40°C to 125°C (unless otherwise noted).

MIN

NOM

MAX

UNIT

Input voltage

VIN (Input voltage range after start-up)

3

36

V

Input voltage

VLDOIN

12

V

Output voltage

VOUT(1)

1

6

V

Output current

IOUT(2)

0

3

A

Frequency

FSW set by RT

200

2200

kHz

Input current

PG

2

mA

Output voltage

PG

0

16

V

TJ

Operating junction temperature

–40

125

°C

TA

Operating ambient temperature

–40

105

°C

(1)

Under no conditions should the output voltage be allowed to fall below 0 V.

(2)

Maximum continuous DC current may be derated when operating with high switching frequency, high ambient temperature, or both.

Refer to the Typical Characteristics section for details.

6.4 Thermal Information

THERMAL METRIC(1)

TLVM13630

UNIT

RDH (QFN)

30 PINS

RθJA

Junction-to-ambient thermal resistance (TPSM63603 EVM)

29.1

°C/W

RθJA

Junction-to-ambient thermal resistance(2)

33.5

°C/W

ψJT

Junction-to-top characterization parameter(3)

4.1

°C/W

ψJB

Junction-to-board characterization parameter(4)

21.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

The junction-to-ambient thermal resistance, RθJA, applies to devices soldered directly to a 64-mm x 83-mm four-layer PCB with 2 oz.

copper and natural convection cooling. Additional airflow and PCB copper area reduces RθJA. For more information see the Layout

section.

(3)

The junction-to-top board characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a

procedure described in JESD51-2A (section 6 and 7). TJ = ψJT × Pdis + TT; where Pdis is the power dissipated in the device and TT is

the temperature of the top of the device.

(4)

The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a

procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × Pdis + TB; where Pdis is the power dissipated in the device and TB is

the temperature of the board 1mm from the device.

TLVM13630

SLVSFT6B – MAY 2021 – REVISED JANUARY 2022

www.ti.com

6

Submit Document Feedback

Copyright © 2022 Texas Instruments Incorporated

Product Folder Links: TLVM13630