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D45C12G.. bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Complementary Silicon Power Transistor
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D45C12 (PNP), D44C12 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
hFE
40
20
20
120
−
−
−
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
ICES
−
−
0.1
mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
−
−
10
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 50 mAdc)
VCE(sat)
−
0.135
0.5
Vdc
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
−
0.85
1.3
Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, f = 1.0 MHz)
Ccb
−
125
−
pF
Gain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
fT
−
40
−
MHz
SWITCHING TIMES
Delay and Rise Times (IC = 1.0 Adc, IB1 = 0.1 Adc)
td + tr
−
50
75
ns
Storage Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
ts
−
350
550
ns
Fall Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
tf
−
50
75
ns
ORDERING INFORMATION
Device
Package
Shipping†
D45C12
TO−220AB
50 Units / Rail
D45C12G
TO−220AB
(Pb−Free)
D44C12
TO−220AB
D44C12G
TO−220AB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
200
0.04
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
20
0.07 0.1
0.2
0.3
1.0
2.0
4.0
70
50
40
30
80
60
0.4
0.7
100
VCE = 1.0 Vdc
TJ = 25°C
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.0
0.01
dc
1.0
ms
2.0
0.1 ms
10
20
100
0.2
5.0
TC ≤ 70°C
DUTY CYCLE
≤ 50%
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
90
3.0
1.0 ms
10
ms
0.02
0.03
0.05
0.3
0.1
0.5
2.0
3.0
5.0
3.0
7.0
30
50
70



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