Characteristics

STPS200170TV1

2/8

DocID11857 Rev 3

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise

specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

200

A

IF(AV)

Average forward current, δ = 0.5

TC = 105 °C

Per diode

100

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

700

A

PARM

Repetitive peak avalanche power

tp

= 10 μs Tj = 125 °C

7400

W

Tstg

Storage temperature range

-55 to +150

°C

Tj

Maximum operating junction temperature(1)

150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Maximum values

Unit

Rth(j-c)

Junction to case

Per diode

0.52

°C/W

Total

0.31

Rth(c)

Coupling thermal resistance

0.1

When the diodes 1 and 2 are used simultaneously:

Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

200

µA

Tj = 125 °C

-

30

100

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 100 A

-

0.85

V

Tj = 150 °C

-

0.63

0.68

Tj = 25 °C

IF = 200 A

-

0.975

Tj = 150 °C

-

0.78

0.86

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses, use the following equation:

P = 0.5 x IF(AV) + 0.0018 x IF2(RMS)