STPS160AFN datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

(W)

F(AV)

δ =tp/T

δ= 1

δ= 0.5

δ= 0.2

δ= 0.1

δ= 0.05

(A)

F(AV)

Figure 2. Average forward current versus ambient

temperature (δ = 0.5)

5 0

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(A)

F(AV)

δ=tp/T

SM B

= 80 °C/ W

=1.5cm

th(j-a)

(CU)

(°C)

amb

SMB R

th(j-a)

t h(j-I)

SM A

=100°C/W

=1.5cm

th(j-a)

(CU)

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMB)

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

th(j-a)

t (s)

Single pulse

Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

1E-2

1E-1

1E+0

1E+1

1E+2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

th(j-a)

t (s)

Single pulse

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

1E-1

1E+0

1E+1

1E+2

1E+3

I (µA)

V (V)

T =100°C

T =75°C

T =25°C

STPS160

Characteristics (curves)

DS0962 - Rev 10

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