5.5 Electrical Characteristics

at TA = 25°C, VS = ±15V, RL = 10kΩ, VREF = 0V, VCM = VS/2, and G = 1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOS

Offset voltage

RTO (P package)

120

1000

µV

RTO (KU package)

600

2000

µV

Offset voltage drift

RTO, TA = –40℃ to 85℃

8.5

µV/°C

Long term drift

200

µV/mo

PSRR

Power-supply rejection

ratio

RTO, VS = ±5V to ±18V

74

90

dB

Common-mode voltage (1)

–200

200

V

Differential voltage

–10

10

V

CMRR

Common-mode voltage

rejection

DC, VCM = –200V to 200V

70

80

dB

TA = –40℃ to 85℃

75

AC, 60Hz, VCM = –200V to 200V

66

80

Differential input

impedance

800

kΩ

Common-mode input

impedance

200

NOISE

eN

Voltage noise

RTO, fB = 0.1Hz to 10Hz

25

µVPP

RTO, f = 1kHz

550

nV/√Hz

GAIN

GE

Gain error

±0.01

±0.05

%

Gain error drift

TA = –40°C to 85°C

±2

ppm/°C

Gain nonlinearity(2)

±0.0005

±0.001 % of FSR

OUTPUT

Output voltage

IO = 20mA, –5mA

10

12

V

Output impedance

0.01

Ω

CL

Load capacitance

Stable operation

1

nF

Short-circuit current

Continuous to VS/2

49, –13

mA

FREQUENCY RESPONSE

BW

Bandwidth, –3dB

200

kHz

Full power bandwidth

VO = 20Vpp

30

kHz

SR

Slew rate

1.7

2.6

V/µs

tS

Settling time

To 0.1%,

VO = 10V step

6.5

µs

To 0.01%

VO = 10V step

10

VCM = 10V step, VDIFF = 0V

4.5

POWER SUPPLY

IQ

Quiescent current

VIN = 0V

1.5

±2

mA

(1)

Input common-mode voltage varies with output voltage; see Typical Characteristics.

(2)

Specified by wafer test.

INA117

SBOS154B – SEPTEMBER 2000 – REVISED APRIL 2024

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