PESDXV4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 28 January 2008

6 of 16

NXP Semiconductors

PESDxV4UF/G/W

Very low capacitance quadruple ESD protection diode arrays

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[3]

For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.

clamping voltage

[1][2][3]

PESD3V3V4UF

PESD3V3V4UG

PESD3V3V4UW

--9

V

PESD3V3V4UF

PESD3V3V4UG

PESD3V3V4UW

--11

V

PESD5V0V4UF

PESD5V0V4UG

PESD5V0V4UW

--11

V

PESD5V0V4UF

PESD5V0V4UG

PESD5V0V4UW

-

-

13

V

differential resistance

PESD3V3V4UF

PESD3V3V4UG

PESD3V3V4UW

-

-

200

Ω

PESD5V0V4UF

PESD5V0V4UG

PESD5V0V4UW

-

-

100

Ω

Table 9.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Fig 3.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical values

006aaa261

10

10

(W)

1

0

200

150

50

100

001aaa633

0.4

0.8

1.2

0