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VNH5200ASTR-E bảng dữ liệu(PDF) 19 Page - STMicroelectronics

tên linh kiện VNH5200ASTR-E
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VNH5200ASTR-E bảng dữ liệu(HTML) 19 Page - STMicroelectronics

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DocID023424 Rev 9
19/31
VNH5200AS-E
Application information
30
Figure 10. Behavior in fault condition (how a fault can be cleared)
Note:
In case the fault condition is not removed, the procedure for unlatching and sending the
device in Stby mode is:
- Clear the fault in the device (toggle: INA if ENA = 0 or INB if ENB =0)
- Pull low all inputs and Diag/EN pins within tDEL.
If the Diag/En pins are already low the fault can be cleared simply by toggling the input. The
device enters in stby mode as soon as the fault is cleared.
3.1
Reverse battery protection
Three possible solutions can be considered:
•
A Schottky diode D connected to VCC pin
•
An N-channel MOSFET connected to the GND pin (see Figure 9: Typical application
circuit)
•
A P-channel MOSFET connected to the VCC pin
The device sustains no more than -15 A in reverse battery conditions because of the two
Body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of
VNH5200AS-E is pulled down to the VCC line (approximately -1.5 V).
Series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If
IRmax is the maximum target reverse current through microcontroller I/Os, series resistor is:
R
V
IOs
V
CC
–
I
Rmax
---------------------------------
=



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