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VNH5200ASTR-E bảng dữ liệu(PDF) 19 Page - STMicroelectronics |
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VNH5200ASTR-E bảng dữ liệu(HTML) 19 Page - STMicroelectronics |
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19 / 31 page ![]() DocID023424 Rev 9 19/31 VNH5200AS-E Application information 30 Figure 10. Behavior in fault condition (how a fault can be cleared) Note: In case the fault condition is not removed, the procedure for unlatching and sending the device in Stby mode is: - Clear the fault in the device (toggle: INA if ENA = 0 or INB if ENB =0) - Pull low all inputs and Diag/EN pins within tDEL. If the Diag/En pins are already low the fault can be cleared simply by toggling the input. The device enters in stby mode as soon as the fault is cleared. 3.1 Reverse battery protection Three possible solutions can be considered: • A Schottky diode D connected to VCC pin • An N-channel MOSFET connected to the GND pin (see Figure 9: Typical application circuit) • A P-channel MOSFET connected to the VCC pin The device sustains no more than -15 A in reverse battery conditions because of the two Body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of VNH5200AS-E is pulled down to the VCC line (approximately -1.5 V). Series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the maximum target reverse current through microcontroller I/Os, series resistor is: R V IOs V CC – I Rmax --------------------------------- = |
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