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L9969X bảng dữ liệu(PDF) 18 Page - STMicroelectronics

tên linh kiện L9969X
Giải thích chi tiết về linh kiện  Automotive chip for single and dual H-bridge
PDF  70 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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L9969X bảng dữ liệu(HTML) 18 Page - STMicroelectronics

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3
Functional description
3.1
Description of external interfaces
•
Voltage supply Vs can be connected directly to the battery voltage via a relay (for example the main relay
in an engine control system). Otherwise an additional external inverse voltage protection is necessary.
•
The load at the outputs is connected between both outputs (OUT1 and OUT2) in H-bridge mode.
•
The ASIC has two inputs controlling the current through the H-bridge: DIR controls the direction of the
current (DIR = 0 → Current flows from OUT1 → OUT2; DIR = 1 → Current flows from OUT2 → OUT1) and
PWM controls the magnitude of the current (duty cycle 0% → no current … duty cycle 100% → maximum
current).
3.2
Functional behavior in detail
All parameters are defined at (unless otherwise specified):
•
4.5 V < VDD < 5.5 V
•
VUF < VS < 28 V (power stages active)
•
0 V < VS < VUF (power stages inactive)
•
-40 °C < TJ < 150 °C
•
The HBR can withstand a VS of 40 V for load dump pulse (see Section 6: Load dump pulse)
•
It is recommended to perform the necessary adjustments at high temperature
•
All voltages refer to AGND
3.2.1
Power stages
L9969 provides a full H-bridge power stage, consisting of two half bridges, which are intended to be used mainly
for the control of DC motors.
The most critical loads are throttle-control actuators with the following electrical characteristics: inductance 0.8
mH to 1.0 mH, resistance 1.2 Ω to 1.8 Ω at room temperature, PWM-frequency fmin = 1 Hz and fmax = 20 kHz.
5 V < VBATT < 18 V, 4.5 V < VDD < 5.5 V, TJ= -40 °C to 150 °C, unless otherwise specified.
Table 12. Power stages parameters
Symbol
Parameter
Condition
Min Typ Max Unit
ROUT-GND Rds_ON resistance low side
IOUT = 3 A
10 V < VS < 28 V
Max. values at Tj= 150 °C
-
-
225 mΩ
ROUT-UB Rds_ON resistance high side
IOUT = 3 A
10 V < VS < 28 V
Max. values at Tj= 150 °C
-
-
315 mΩ
Ileak
OFF State leakage current H-bridge disabled by short circuit
detection; this is the current of one stage
VS = 13 V
OUTx = 0 V or VS
-200
-
200
µA
Ileak
OFF State leakage current VDD below VDD_RES
VS = 13 V
OUTx = 0 V or VS
-200
-
800
µA
3.2.2
Inverse current on VS
Inverse currents flow out of VS. An inverse current with maximum 5 A decreasing during a maximum period of 250
ms does not lead to any destruction of the H-bridge ASIC. After exposure to such an inverse current, the full
functionality of the device is guaranteed (according to the product target specification).
L9969x
Functional description
DS14029 - Rev 6
page 18/70



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