L9924TR datasheet(39/85 Pages) STMICROELECTRONICS

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L9924

Electrical specifications

The values in items 5 and 6 for VGHS and VGLS are valid only when the charge pump has

been activated and it is working properly, otherwise they cannot be guaranteed.

The suggested external MOS used to drive the lamp is a self-protected PowerMOS like ST

VND5N07.

Table 24. Electrical characteristics pin "GHS" and "GLS"

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Drivers for external high side power MOS

1IGHSON

Turn ON current

(SOURCE stage)

Tj = 25 °C,

V(LHC) don't care,

V(GHS) = V(LHC)

-1.65

2IGHSOFF

Turn OFF current

(SINK stage)

Tj = 25 °C,

V(LHC) don't care,

V(GHS) - V(LHC) = VGHS

-1.65

3IGLSON

Turn ON current

(SOURCE stage)

Tj = 25°C,

VLHCfault<V(LHC)<VLHCLSx,

V(GLS)=V(GND)

-1.65

4IGLSOFF

Turn OFF current

(SINK stage)

Tj = 25 °C,

V(LHC) don't care,

V(GLS)-V(GND) = VGLS

-1.65

5VGHS

High level voltage for gate

of High-side driver

V(A+/B+) = 7 V

CP_LOW = b0

V(LHC) = V(A+/B+)

I(CP) = 0 µA

V(LHC)

+5.5

V(A+/B+) = 12 V

CP_LOW = b0

V(LHC) = V(A+/B+)

I(CP) = 0 µA

V(LHC)

+11

V(LHC)

+13

V(A+/B+) = 24 V

CP_LOW = b0

V(LHC) = V(A+/B+)

I(CP) = 0 µA

V(LHC)

+11

V(LHC)

+13

6VGLS

High level voltage for gate

of Low-side driver

V(A+/B+) = 7 V

CP_LOW = b0

VLHCfault<V(LHC)<VLHCLS2

I(CP)=0µA

V(A+/B+) = 12 V

CP_LOW = b0

VLHCfault<V(LHC)<VLHCLS2

I(CP) = 0 µA

911

V(A+/B+) = 24 V

CP_LOW = b0

VLHCfault<V(LHC)<VLHCLS2

I(CP) = 0 µA

911

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