5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

IIO < 50nA, across operating

temperature range

3.6

V

ILEAKAGE

Leakage current at 3.6V

VIO = 3.6V, I/O to GND

0.1

10

nA

VBRF

Breakdown voltage, I/O to GND (1)

IIO = 1mA

4.5

7.5

V

VFWD

Forward Voltage, GND to I/O (1)

IIO = 1mA

0.8

V

VHOLD

Holding voltage, I/O to GND (2)

IIO = 1mA

5.1

V

VCLAMP

Clamping voltage

IPP = 6A (8/20µs Surge), I/O to GND

6.3

V

IPP = 16A (100ns TLP), I/O to GND

6.8

V

IPP = 16A (100ns TLP), GND to I/O

4.7

V

RDYN

Dynamic resistance

I/O to GND, 100ns TLP, between 10 to

20A IPP

0.13

Ω

GND to I/O , 100ns TLP, between 10

to 20A IPP

0.2

CLINE

Line capacitance, IO to GND

VIO = 0V, Vp-p = 30mV, f = 1MHz

0.9

1.1

pF

(1)

VBRF and VBRR are defined as the voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback

state

(2)

VHOLD is defined as the voltage when 1mA is applied, after the device has successfully latched into the snapback state.

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SLVSEN8C – JULY 2018 – REVISED JUNE 2025

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