DS9637A

SNLS388D – MAY 1998 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Storage Temperature Range

CDIP

−65°C to + 175°C

PDIP

−65°C to + 150°C

Lead Temperature

CDIP

(Soldering, 30 seconds)

300°C

PDIP and SOIC Packages

(Soldering, 10 seconds)

265°C

Maximum Power Dissipation(3) at 25°C

CDIP

1300 mW

PDIP

930 mW

SOIC

810 mW

VCC Lead Potential to Ground

−0.5V to 7.0V

Input Potential to Ground

±15V

Differential Input Voltage

±15V

Output Potential to Ground

−0.5V to +5.5V

Output Sink Current

50 mA

ESD Susceptibility, HBM

≥2 kV

(1)

Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that

the devices should be operated at these limits. The tables of “Electrical Characteristics” provide conditions for actual device operation.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Derate CDIP 8.7 mW/°C above 25°C; derate PDIP 7.5 mW/°C above 25°C; derate SOIC package 6.5 mW/°C above 25°C.

Recommended Operating Conditions

DS9637AM

Min

Max

Units

Supply Voltage (VCC)

4.5

5.5

V

Operating Temperature (TA)

−55

+125

°C

DS9637AC

Supply Voltage (VCC)

4.75

5.25

V

Operating Temperature (TA)

0

+70

°C

2

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