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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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L9945 bảng dữ liệu(PDF) 26 Page - STMicroelectronics |
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L9945 bảng dữ liệu(HTML) 26 Page - STMicroelectronics |
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26 / 144 page  Figure 13. Clamping for HS configuration GADG2702171244PS GNSPxx To load VPS CM IPU IPD VGBHI Internal clamping Control signal Control signal D Ratings: NMOS ==> VGS = 20 V , PMOS ==> VSG = 20 V evice side Board side HS NFET VPS GNSPxx SNGPxx DRNxx External clamping CM IPU IPD Internal clamping To load Control signal Control signal Device side Board side HS PFET SNGPxx DRNxx External clamping RPU RG RG Figure 13 shows the recommended clamping for the external FETs used in HS configuration. The internal clamping is meant to protect against overdrive but is not intended to be a recirculation path for the current. An external freewheeling diode is needed for inductive switching loads. Figure 14. Clamping for LS configuration To load To PGND CM IPU IPD VGBHI Internal clamping RG Control signal Control signal Device side Board side LS NFET GNSPxx SNGPxx DRNxx External clamping VBATT GADG2702171519PS Figure 14 shows the recommended clamping solutions for the LS configuration. Voltage on the DRNx pin has to be limited to prevent component damage. A suppressor circuit can be used to clamp the voltage on DRNx pin (AMR is 60 V). For the freewheeling of inductive loads: • A Zener feedback to the gate can be a solution to allow active freewheeling; • A diode on DRNx pin can be used to allow passive freewheeling towards battery. 5.4.6 Electrical characteristics The table below lists the electrical characteristics for the output pre-drivers. L9945 Functional description DS12275 - Rev 10 page 26/144 |
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