CDCLVC1310

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SCAS917E – JULY 2011 – REVISED JANUARY 2014

PHASE NOISE WITH XTAL

(1) SELECTED

VDD = VDDO = 2.5 V or 3.3 V, fXTAL = 25 MHz, TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IB = 12 kHz to 5 MHz, VDD = VDDO = 3.3 V

80

Jrms

RMS phase jitter

fs rms

IB = 12 kHz to 5 MHz, VDD = VDDO = 2.5 V

115

foffset = 100 Hz, VDD = VDDO = 3.3 V

–92

foffset = 1 kHz, VDD = VDDO = 3.3 V

–137

foffset = 10 kHz, VDD = VDDO = 3.3 V

–163

foffset = 100 kHz, VDD = VDDO = 3.3 V

–168

foffset = 1 MHz, VDD = VDDO = 3.3 V

–168

foffset = 5 MHz, VDD = VDDO = 3.3 V

–169

PN

Phase noise (see Figure 15)

dBc/Hz

foffset = 100 Hz, VDD = VDDO = 2.5 V

–91

foffset = 1 kHz, VDD = VDDO = 2.5 V

–136

foffset = 10 kHz, VDD = VDDO = 2.5 V

–159

foffset = 100 kHz, VDD = VDDO = 2.5 V

–164

foffset = 1 MHz, VDD = VDDO = 2.5 V

–165

foffset = 5 MHz, VDD = VDDO = 2.5 V

–165

(1)

Crystal specification: CL = 18 pF; ESR = 35 Ω (max); C0 = 7 pF; drive level = 100 µW (max)

DEVICE CURRENT CONSUMPTION

over recommended ranges of supply voltage, load and ambient temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OVERALL PARAMETERS FOR ALL VERSIONS

OE = 0 V or VDD;

Ref. input (PRI/SEC) = 0 V or VDD;

14

IO = 0 mA; VDD / VDDO = 3.3 V

IDD

Static device current(1)

mA

OE = 0 V or VDD;

Ref. input (PRI/SEC) = 0 V or VDD;

8

IO = 0 mA; VDD / VDDO = 2.5 V

Device current with XTAL

IDD,XTAL

20

mA

input(1)

VDDO = 3.465 V; f = 100 MHz

8.8

VDDO = 2.625 V; f = 100 MHz

7.7

Power dissipation capacitance

CPD

pF

per output(2)

VDDO = 2 V; f = 100 MHz

7.3

VDDO = 1.65 V; f = 100 MHz

6.9

(1)

IDD and IDD,XTAL is the current through VDD; outputs enabled or in the high-impedance state; no load.

(2)

This is the formula for the power dissipation calculation (see the Power Considerations section)

IDD,Total = IDD + IDD,Cload + IDD,dyn [mA]

IDD,dyn = CPD × VDDO × f × n [mA]

IDD,Cload = Cload × VDDO × f × n [mA]

n = Number of switching output pins

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