AL1783Q

Document number: DS46208 Rev. 1 - 2

3 of 14

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January 2024

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AL1783Q

Functional Block Diagram

Pre_regulator

Bandgap

Bias current

UVLO

OSC

VREF

Dimming Signal

Process

REF1

PWM1

PWM2

PWM3

VIN

LED1

LED2

LED3

GND

VDD

Current Reference

Current Ratio

Circuit

PWM Control

Current Ratio

Circuit

PWM Control

Current Ratio

Circuit

PWM Control

REF2

Current Reference

REF3

Current Reference

Thermal

Foldback

Protection Function

FAULTB

Figure 2. Functional Block Diagram

Absolute Maximum Ratings (Note 4)

Symbol

Parameter

Ratings

Units

VVIN

Input Voltage Relative to GND

-0.3 to 62

V

VLED1,2,3

LED1,2,3 Voltage Relative to GND

-0.3 to 62

V

ILED1,2,3

LED1,2,3 Output Current

300

mA

VPWM1,2,3, VREF1,2,3,

VFAULTB

PWM1,2,3, REF1,2,3, and FAULT Voltage Relative to GND

-0.3 to 7

V

TJ

Operating Junction Temperature

-40 to +150

°C

TST

Storage Temperature

-55 to +160

°C

Note:

4. Stresses greater than Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

ESD Ratings

Symbol

Parameter

Rating

Unit

VESD

Human Body Model (HBM)

+/-4000

V

Charged Device Model (CDM)

+/-1000