Nexperia

2PB710ASL-Q

50 V, 500 mA PNP general-purpose transistors

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-60

V

VCEO

collector-emitter voltage open base

-

-50

V

VEBO

emitter-base voltage

open collector

-

-5

V

IC

collector current

-

-500

mA

ICM

peak collector current

-

-1000

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

-200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

500

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2PB710ASL-Q

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Product data sheet

3 January 2022

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