6 Specifications

6.1 Absolute Maximum Ratings

Over operating junction temperature range and all voltages are with respect to GND (unless otherwise noted).(1)

MIN

MAX

UNIT

VGVDD

Low-side supply voltage

–0.3

19.5

V

VBST to VSH High-side supply voltage

–0.3

19.5

V

VINL, VINH

Input voltages on INL and INH

–0.3

19.5

V

VGL

Output voltage on GL

–0.3

GVDD + 0.3

V

VGH

Output voltage on GH

VSH– 0.3

VBST + 0.3

V

VSH

Voltage on SH

DC

–1

95

V

Repetitive pulse < 100 ns(2)

–19.5

95

VBST

Voltage on BST

VSH

107

V

TJ

Junction temperature

–40

125

°C

Tstg

Storage temperature

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Values are verified by characterization and are not production tested.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC specification

JESD22-C101(2)

±250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating junction temperature range and all voltages are with respect to GND (unless otherwise noted).

MIN

NOM

MAX

UNIT

VGVDD

Supply voltage

9

12

18

V

VINL, VINH

Input Voltage Range

0

VGVDD + 0.3

V

VBST

Voltage on BST

VSH + 9

105

V

VSH

Voltage on SH (DC)

–1

VBST – VGVDD

V

VSH

Voltage on SH (repetitive pulse < 100 ns)(1)

–18

VBST – VGVDD

V

SRSH

Voltage slew rate on SH

50

V/ns

TJ

Operating junction temperature

–40

125

°C

(1)

Values are verified by characterization and are not production tested.

6.4 Thermal Information

THERMAL METRIC(1)

LM2103

UNIT

D (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

133.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

75.2

°C/W

RθJB

Junction-to-board thermal resistance

76.7

°C/W

ψJT

Junction-to-top characterization parameter

25.5

°C/W

ψJB

Junction-to-board characterization parameter

75.9

°C/W

LM2103

SNVSC62A – APRIL 2023 – REVISED AUGUST 2023

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