CSD19531KCS 100V N-Channel NexFET™ Power MOSFET

1 Features

• Ultra-low Qg and Qgd

• Low-thermal resistance

• Avalanche rated

• Lead-free terminal plating

• RoHS compliant

• Halogen free

• TO-220 plastic package

2 Applications

• Secondary side synchronous rectifier

• Hot swap telecom

• Motor control

3 Description

This 100V, 6.4mΩ, TO-220 NexFET™ power MOSFET

is designed to minimize losses in power conversion

applications.

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

Qg

Gate Charge Total (10V)

37

nC

Qgd

Gate Charge Gate-to-Drain

7.5

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 6V

7.3

mΩ

VGS = 10V

6.4

VGS(th)

Threshold Voltage

2.7

V

Device Information(1)

DEVICE

PACKAGE

MEDIA

QTY

SHIP

CSD19531KCS

TO-220 Plastic Package

Tube

50

Tube

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package Limited)

100

A

Continuous Drain Current (Silicon Limited), TC

= 25°C

110

Continuous Drain Current (Silicon Limited), TC

= 100°C

78

IDM

Pulsed Drain Current(1)

285

A

PD

Power Dissipation

214

W

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 175

°C

EAS

Avalanche Energy, Single Pulse

ID = 60A, L = 0.1mH, RG = 25Ω

180

mJ

(1)

Max RθJC = 0.7° C/W, pulse duration ≤ 100μs, duty cycle ≤

1%.

0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C, ID = 60A

TC = 125°C, ID = 60A

G001

RDS(on) vs VGS

0

1

2

3

4

5

6

7

8

9

10

0

4

8

12

16

20

24

28

32

36

40

Qg - Gate Charge (nC)

ID = 60A

VDS = 50V

G001

Gate Charge

CSD19531KCS

SLPS407D – SEPTEMBER 2013 – REVISED MAY 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.