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V1.0

23/02/24

Single Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

sg.element14.com/b/multicomp-pro

Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified)

Parameter

Symbol

CSB649

CSD669

CSB649A

Unit

Collector-base voltage (open emitter)

VCBO

180

V

Collector-emitter voltage (open base)

VCEO

160

Collector current

IC

1.5

A

Total power dissipation up to TC = 25°C

PC

20

W

Junction temperature

Tj

150

°C

Emitter-base voltage (open collector)

VEBO

5

V

Collector current (peak)

ICP

3

A

Total power dissipation up to TA = 25°C

PC

1

W

Storage temperature

Tstg

65 to +150

°C

Application

•  Low frequency Power Amplifier

Features:

1. This product is available in AEC-Q101 Compliant and PPAP Capable also.

Parameter

Symbol

Test Condition

Min./Min CSB649

CSD669 CSB649A

Unit

Collector Cut off Current

ICBO

IE = 0; VCB = 160V

Max

10

μA

Breakdown voltages

VCEO

IC = 10mA; IB = 0

120

160

V

IC = 1mA; IE = 0

180

VEBO

IE = 1mA; IC = 0

5

Saturation voltage

VCEsat

IC = 500mA; IB = 50mA

1

Base-emitter voltage

VBE (on)

IC = 150mA; VCE = 5V

1.5

DC Current Gain

hFE

IC = 150mA; VCE = 5V

Min

60

Max

320

200

IC = 500mA; VCE = 5V

Min

30

Transition frequency

fT

IC = 150mA; VCE = 5V

Typ

140

MHz

Output capacitance

Cob

VCB = 10 V;

IE = 0; f = 1 MHz

PNP

27

pF

NPN

14

Electrical Characteristics at (Ta = 25°C Unless otherwise specified)