CSD25501F3 datasheet(5/12 Pages) TI2

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4.3 Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

TC - Case Temperature (qC)

-75

-50

-25

100

125

150

175

0.35

0.45

0.55

0.65

0.75

0.85

0.95

1.05

D006

ID = –250µA

Figure 4-6. Threshold Voltage vs Temperature

-VGS - Gate-To-Source Voltage (V)

1.5

2.5

3.5

4.5

5.5

120

150

180

D007

TC = 25° C, ID = -0.4 A

TC = 125° C, ID = -0.4 A

Figure 4-7. On-State Resistance vs Gate-to-Source Voltage

TC - Case Temperature (qC)

-75

-50

-25

100

125

150

175

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

D008

VGS = -1.8 V

VGS = -2.5 V

VGS = -4.5 V

ID = –0.4A

Figure 4-8. Normalized On-State Resistance vs Temperature

-VSD - Source-To-Drain Voltage (V)

0.2

0.4

0.6

0.8

0.0001

0.001

0.01

0.1

D009

TC = 25qC

TC = 125qC

Figure 4-9. Typical Diode Forward Voltage

-VDS - Drain-To-Source Voltage (V)

0.1

100

0.1

100

D010

100 ms

10 ms

1 ms

100 µs

Single pulse, typical RθJA = 255°C/W

Figure 4-10. Maximum Safe Operating Area

TA - Ambient Temperature (qC)

-50

-25

100

125

150

175

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

D011

Typical RθJA = 90°C/W

Figure 4-11. Maximum Drain Current vs Temperature

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CSD25501F3

SLPS692C – OCTOBER 2017 – REVISED JUNE 2024

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