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L6206

Circuit description

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5

Circuit description

5.1

Power stages and charge pump

The L6206 device integrates two independent power MOS full bridges. Each power MOS

has an Rds(ON) = 0.3  (typical value at 25 °C), with intrinsic fast freewheeling diode. Cross

conduction protection is achieved using a deadtime (td = 1s typical) between the switch off

and switch on of two power MOS in one leg of a bridge.

Using N-channel power MOS for the upper transistors in the bridge requires a gate drive

voltage above the power supply voltage. The bootstrapped (VBOOT) supply is obtained

through an internal oscillator and few external components to realize a charge pump circuit

as shown in Figure 5. The oscillator output (VCP) is a square wave at 600 kHz (typical) with

10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown

in Table 6.

Figure 5. Charge pump circuit

Table 6. Charge pump external components values

Component

Value

CBOOT

220 nF

CP

10 nF

RP

100



D1

1N4148

D2

1N4148

D2

CBOOT

D1

RP

CP

VS

VSA

VCP

VBOOT

VSB

D01IN1328