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LM5035 bảng dữ liệu(PDF) 4 Page - Texas Instruments

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LM5035 bảng dữ liệu(HTML) 4 Page - Texas Instruments

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LM5035
SNVS428H – JANUARY 2006 – REVISED OCTOBER 2015
www.ti.com
Pin Functions (continued)
PIN
NO.
TYPE
DESCRIPTION
APPLICATION INFORMATION
NAME
HTSSOP
WQFN
If cycle-by-cycle current limit is exceeded during any cycle, a 22-µA current is
sourced to the RES pin capacitor. If the RES capacitor voltage reaches 2.5 V,
RES
10
9
I
Restart timer
the soft-start capacitor will be fully discharged and then released with a pull-up
current of 1.2 µA. After the first output pulse at LO (when SS > COMP offset,
typically 1 V), the SS pin charging current will revert to 55 µA.
SR1
18
18
O
Synchronous rectifier driver output
Control output of the synchronous FET gate. Capable of 0.5-A peak current.
SR2
17
17
O
Synchronous rectifier driver output
Control output of the synchronous FET gate. Capable of 0.5-A peak current.
An internal 55-µA current source charges an external capacitor to set the soft-
SS
8
7
I
Soft-start input
start rate. During a current limit restart sequence, the internal current source is
reduced to 1.2 µA to increase the delay before retry.
An external voltage divider from the power source sets the shutdown and
standby comparator levels. When UVLO reaches the 0.4-V threshold the VCC
UVLO
2
24
I
Line undervoltage lockout
and REF regulators are enabled. When UVLO reaches the 1.25-V threshold,
the SS pin is released and the device enters the active mode. Hysteresis is set
by an internal current sink that pulls 23 µA from the external resistor divider.
If an auxiliary winding raises the voltage on this pin above the regulation set-
Output of the high voltage start-up regulator.
VCC
16
16
I/O
point, the start-up regulator will shutdown, thus reducing the internal power
The VCC voltage is regulated to 7.6 V
dissipation.
Input to the Start-up Regulator. Operating input range is 13 V to 100 V with
VIN
20
21
I
Input voltage source
transient capability to 105 V. For power sources outside of this range, the
LM5035 can be biased directly at VCC by an external regulator.
Exposed pad, underside of package (WQFN)
No electrical contact. Connect to system ground plane for reduced thermal
EP
GND
resistance.
PowerPAD (HTSSOP)
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VIN to GND
–0.3
105
V
HS to GND
–1
105
V
HB to GND
–0.3
118
V
HB to HS
–0.3
18
V
VCC to GND
–0.3
16
V
CS, RT, DLY to GND
–0.3
5.5
V
COMP input current
10
mA
All other inputs to GND
–0.3
7
V
Junction temperature
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office or Distributors for availability and
specifications.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)
±1500
Electrostatic
V(ESD)
(1)
V
Charged-device model (CDM), per JEDEC specification JESD22-
discharge
±1000
C101(3)
(1)
The human body model is a 100-pF capacitor discharged through a 1.5-k
Ω resistor into each pin. 2 kV for all pins except HB, HO, and
HS, which are rated at 1.5 kV.
(2)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
4
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