6

ISO7830, ISO7830F

SLLSEO2B – JULY 2015 – REVISED JUNE 2016

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

ISO7830

UNIT

DW (SOIC)

DWW (SOIC)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

81.1

83.4

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

43.8

45.2

°C/W

RθJB

Junction-to-board thermal resistance

45.7

54.1

°C/W

ψJT

Junction-to-top characterization parameter

17.0

17.6

°C/W

ψJB

Junction-to-board characterization parameter

45.2

53.3

°C/W

RθJC(bottom)

Junction-to-case(bottom) thermal resistance

—

—

°C/W

6.5 Power Rating

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PD

Maximum power dissipation

VCC1 = VCC2 = 5.5 V, TJ = 150°C,

CL = 15 pF, input a 50 MHz 50% duty

cycle square wave

150

mW

PD1

Maximum power dissipation by side-1

25

mW

PD2

Maximum power dissipation by side-2

125

mW