CSD23280F3T datasheet(5/13 Pages) TI2

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Qg - Gate Charge (nC)

0.2

0.4

0.6

0.8

1.2

0.5

1.5

2.5

3.5

4.5

D004

VDS = –6 V

ID = –0.4 A

Figure 5-4. Gate Charge

-VDS - Drain-to-Source Voltage (V)

100

1000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

Figure 5-5. Capacitance

TC - Case Temperature (qC)

-75

-50

-25

100

125

150

175

0.25

0.35

0.45

0.55

0.65

0.75

0.85

0.95

D006

ID = –250 µA

Figure 5-6. Threshold Voltage vs Temperature

-VGS - Gate-To-Source Voltage (V)

100

150

200

250

300

350

D007

TC = 25° C, ID = -0.4 A

TC = 125° C, ID = -0.4 A

Figure 5-7. On-State Resistance vs Gate-to-Source

Voltage

TC - Case Temperature (qC)

-75

-50

-25

100

125

150

175

0.7

0.8

0.9

1.1

1.2

1.3

1.4

D008

VGS = -1.8 V

VGS = -2.5 V

VGS = -4.5 V

VGS = –4.5 V

ID = –0.4 A

Figure 5-8. Normalized On-State Resistance vs

Temperature

-VSD - Source-To-Drain Voltage (V)

0.2

0.4

0.6

0.8

0.0001

0.001

0.01

0.1

D009

TC = 25qC

TC = 125qC

Figure 5-9. Typical Diode Forward Voltage

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CSD23280F3

SLPS601B – APRIL 2016 – REVISED FEBRUARY 2022

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