4

TMP20

SBOS466B – DECEMBER 2009 – REVISED DECEMBER 2018

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Copyright © 2009–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, V+

7

V

Operating temperature

–55

150

°C

Junction temperature, TJ(max)

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101

(2)

±1000

Machine model (MM)

±200

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VDD

Supply voltage range

1.8

5.5

V

TA

Specified temperature range

–55

130

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TMP20

UNIT

DRL (SOT563)

DCK (SC70)

6 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

238

185

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

253

263.3

°C/W

RθJB

Junction-to-board thermal resistance

126.4

76.2

°C/W

ψJT

Junction-to-top characterization parameter

126

51.3

°C/W

ψJB

Junction-to-board characterization parameter

13

1.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

125.9

50.6

°C/W