BDX33B datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

1.78

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Co nditi ons

Mi n.

Typ .

Max.

Unit

ICBO

Collector Cut-of f Current

(IE =0)

for BDX33B/34B

VCB =80 V

for BDX33C/34C

VCB = 100V

Tcas e = 100

for BDX33B/34B

VCB =80 V

for BD X33C /3 4C

VCB =100 V

0.2

ICEO

Collector Cut-of f Current

(IB =0)

for BDX33B/34B

VCE =40 V

for BDX33C/34C

VCE = 50V

Tcas e = 100

for BDX33B/34B

VCE =40 V

for BDX33C/34C

VCE =50 V

0.5

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =5 V

VCEO(s us)

∗ Collector-Emitter Sustaining

Voltage (IB =0)

IC =100 mA

for BDX33B/34B

for BDX33C/ 34C

100

VCER(sus)

∗ Collector-emitter Sustaining

Voltage (RBE =100

Ω)

IC = 100 mA for BDX33B/34B

for BDX33C/34C

100

VCEV(su s)

∗ Collector-emitter Sustaining

Voltage (VBE =-1.5 V)

IC = 100 mA for BDX33B/34B

for BDX33C/34C

100

VCE(sat)

∗ Collector-emitter Saturation

Voltage

IC =3 A

I B =6 mA

2.5

VBE

∗

Base-emitter Voltage

IC =3 A

V CE =3 V

2.5

hFE

∗

DC Current G ain

IC =3 A

V CE = 3 V

750

∗

Parallel-Diode Forward

Voltage

IF =8 A

hfe

SmallSignalCurrent Gain

IC =1 A

VCE =5 V

f = 1MHz

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

BDX33B BDX33C BDX34B BDX34C

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