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HMC372LP3 bảng dữ liệu(PDF) 1 Page - Hittite Microwave Corporation |
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HMC372LP3 bảng dữ liệu(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 8 page ![]() 5 5 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC372LP3 / 372LP3E GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz v02.0605 General Description Features Functional Diagram The HMC372LP3 & HMC372LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1.0 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5.0V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. The HMC372LP3 & HMC372LP3E share the same package and pinout with the HMC356LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifier. Noise Figure: <1.0 dB +34 dBm Output IP3 Gain: 15 dB Very Stable Gain vs. Supply & Temperature Single Supply: +5.0 V @ 100 mA 50 Ohm Matched Output Electrical Specifications, T A = +25° C, Vs = +5V Typical Applications The HMC372LP3 / HMC372LP3E is ideal for basestation receivers: • GSM, GPRS & EDGE • CDMA & W-CDMA • Private Land Mobile Radio Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.008 0.015 0.008 0.015 dB / °C Noise Figure 1.0 1.3 1.0 1.3 dB Input Return Loss 25 25 dB Output Return Loss 14 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 18 21 17 20 dBm Saturated Output Power (Psat) 23.5 22.5 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) 34 30 33 dBm Supply Current (Idd) 100 100 mA |
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