BC141 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =60 V

Tamb = 150

100

µA

V( BR)CBO

∗ Collector-Base

Breakdown Volt age

(IE =0)

IC =100

µA

100

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =30 mA

V(BR)EBO

∗ Emitter-Base

Breakdown Volt age

(IC =0)

IE =100

µA7

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =100 mA

IB =10 mA

IC =500 mA

IB =50 mA

IC =1 A

IB = 100 mA

0.1

0. 35

0.6

VBE(on)

∗ Base-Emitter On

Voltage

IC =1 A

VCE =1 V

1. 25

1.8

hFE

∗

DC Current G ain

IC =100

µAVCE =1 V

for BC141

for BC141 Gr. 6

for BC141 Gr. 10

for BC141 Gr. 16

IC =100 mA

VCE =1 V

for BC141

for BC141 Gr. 6

for BC141 Gr. 10

for BC141 Gr. 16

IC =1 A

VCE =1 V

for BC141

for BC141 Gr. 6

for BC141 Gr. 10

for BC141 Gr. 16

100

140

100

160

250

100

160

250

Transit ion F requency

IC =50 mA

VCE =10 V

MHz

CCBO

Collect or Base

Capacitance

IE =0

VCB =5 V

f =1MHz

ton

Turn-on T ime

IC =100 mA

IB1 =5 mA

250

toff

Turn-off T ime

IC =100 mA

IB1 =IB2 =5 mA

850

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

BC141

2/5

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