5

MAX3222

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SLLS408H – JANUARY 2000 – REVISED OCTOBER 2016

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Copyright © 2000–2016, Texas Instruments Incorporated

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient

temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.

(3)

The package thermal impedance is calculated in accordance with JESD 51-7.

6.4 Thermal Information

THERMAL METRIC(1)(2)(3)

MAX3222

UNIT

DB (SSOP)

DW (SOIC)

PW (TSSOP)

20 PINS

20 PINS

20 PINS

RθJA

Junction-to-ambient thermal resistance

84.4

70.2

94.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

44.1

36.2

29.9

°C/W

RθJB

Junction-to-board thermal resistance

40

37.9

45.1

°C/W

ψJT

Junction-to-top characterization parameter

11

11.1

1.4

°C/W

ψJB

Junction-to-board characterization parameter

39.5

37.5

44.6

°C/W

(1)

Test conditions are C1

−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

(2)

All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

6.5 Electrical Characteristics: Device

over operating free-air temperature range (unless otherwise noted)

(1). See Figure 8.

PARAMETER

TEST CONDITIONS

MIN

TYP(2)

MAX

UNIT

II

Input leakage current (EN,

PWRDOWN)

±0.01

±1

µA

ICC

Supply current

No load, PWRDOWN at VCC

0.3

1

mA

Supply current (powered off)

No load, PWRDOWN at GND

1

10

µA

(1)

Test conditions are C1

−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

(2)

All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.

6.6 Electrical Characteristics: Driver

over operating free-air temperature range (unless otherwise noted)

(1). See Figure 8.

PARAMETER

TEST CONDITIONS

MIN

TYP(2)

MAX

UNIT

VOH

High-level output voltage

DOUT at RL = 3 kΩ to GND, DIN =

GND

5

5.4

V

VOL

Low-level output voltage

DOUT at RL = 3 kΩ to GND, DIN =

VCC

–5

–5.4

V

IIH

High-level input current

VI = VCC

±0.01

±1

µA

IIL

Low-level input current

VI at GND

±0.01

±1

µA

IOS

Short-circuit output current

VCC = 3.6 V, VO = 0 V

±35

±60

mA

VCC = 5.5 V, VO = 0 V

ro

Output resistance

VCC, V+, and V– = 0 V, VO = ±2 V

300

10M

Ω

Ioff

Output leakage current

PWRDOWN = GND, VO = ±12 V,

VCC = 3 V to 3.6 V

±25

µA

PWRDOWN = GND, VO = ±10 V,

VCC = 4.5 V to 5.5 V

±25