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DF01M bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Bridge Rectifiers
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DF01M bảng dữ liệu(HTML) 2 Page - ON Semiconductor

  DF01M Datasheet HTML 1Page - ON Semiconductor DF01M Datasheet HTML 2Page - ON Semiconductor DF01M Datasheet HTML 3Page - ON Semiconductor DF01M Datasheet HTML 4Page - ON Semiconductor DF01M Datasheet HTML 5Page - ON Semiconductor DF01M Datasheet HTML 6Page - ON Semiconductor DF01M Datasheet HTML 7Page - ON Semiconductor  
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© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
DF005M - DF10M Rev. 3.3
May 2015
DF005M - DF10M
Bridge Rectifiers
Features
• Surge Overload Rating: 50 Amperes Peak
• Glass Passivated Junction.
• Low Leakage.
• UL Certified, UL #E258596.
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number
Top Mark
Package
Packing Method
DF005M
DF005M
MDIP 4L
Rail
DF01M
DF01M
MDIP 4L
Rail
DF02M
DF02M
MDIP 4L
Rail
DF04M
DF04M
MDIP 4L
Rail
DF06M
DF06M
MDIP 4L
Rail
DF08M
DF08M
MDIP 4L
Rail
DF10M
DF10M
MDIP 4L
Rail
Symbol
Parameter
Value
Unit
DF
005M
DF01M DF02M DF04M DF06M DF08M DF10M
VRRM
Maximum Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
VRMS
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
VDC
DC Reverse Voltage at Rated IR
50
100
200
400
600
800
1000
V
IF(AV)
Average Rectified Forward Current
at TA = 40°C
1.5
A
IFSM
Non-Repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine Wave
50
A
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
-55 to +150
°C
DIP



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