DC and AC parameters

M41T315Y, M41T315V, M41T315W

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Table 9.

DC characteristics

Sym

Parameter

M41T315Y

M41T315V/W

Unit

–65

–85

Min

Typ

Max

Min

Typ

Max

(2)

Input leakage

current

0V

±1

±1µA

Output leakage

current

0V

±1

±1µA

(3)

Supply current

10

6

mA

current

150

100

mA

(3)

Supply current

(TTL standby)

32

mA

(3)

current

1

1

mA

(5)

Input low voltage

–0.3

0.8

–0.3

0.6

V

(5)

Input high voltage

2.2

2.0

0.3

V

(6)

Output low voltage

0.4

0.4

V

VOH

(6)

Output high

voltage

2.4

2.4

V

Power fail

deselect

4.25

4.50

2.80 (V)

2.60 (W)

2.97 (V)

2.70 (W)

V

Battery back-up

switchover

2.5

V

Battery voltage

2.5

3.7

2.5

3.7

V

CEO output

voltage

or

or

V

(3)

Battery current

0.5

0.5

µA

current

100

100

µA

1.

Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).

2.

3.

Measured without RAM connected.

4.

ICCO1 is the maximum average load current the device can supply to external memory.

5.

Voltages are referenced to Ground.

6.

Measured with load shown in Figure 10 on page 19.

7.

ICCO2 is the maximum average load current that the device can supply to memory in the battery backup mode.