LM48100Q-Q1

SNAS470E – OCTOBER 2008 – REVISED NOVEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

See

(1) (2) (3)

MIN

MAX

UNIT

Supply voltage, continuous

6

V

Input voltage

−0.3

VDD + 0.3

°C

Power dissipation(4)

Internally Limited

Junction temperature

150

°C

Lead temperature (soldering 4 sec)(5)

260

°C

Storage temperature

−65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The Electrical Characteristics tables found in Specifications list ensured specifications under the listed Recommended Operating

Conditions except as otherwise modified or specified by the Electrical Characteristics Test Conditions, Notes, or both. Typical

specifications are estimations only and are not ensured.

(3)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(4)

θJA measured with a 4 layer JEDEC board.

(5)

For detailed information on soldering plastic HTSSOP and LLP packages go to the TI Packaging site, ti.com/packaging.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per AEC Q100-002(1)

2500

V(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per AEC Q100-011

300

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

Temperature

TMIN ≤ TA ≤ TMAX

−40

105

°C

Supply voltage

VDDand PVDD

3

5.5

V

1.8

5.5

V

I2C Supply voltage

I2CVDD

I2CVDD

VDD

V

6.4 Thermal Information

LM48100Q-Q1

THERMAL METRIC(1)

PWP (HTSSOP)

UNIT

14 PINS

RθJA

Junction-to-ambient thermal resistance

37.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

5.2

°C/W

RθJB

Junction-to-board thermal resistance

—

°C/W

ψJT

Junction-to-top characterization parameter

—

°C/W

ψJB

Junction-to-board characterization parameter

—

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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