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DB3 bảng dữ liệu(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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DB3 bảng dữ liệu(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
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1 / 2 page ![]() DB3 / DB4 SIGNAL BIDIRECTIONAL DIAC Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts. These diacs are intended for use in thyristors phase control, circuits for lamp dimming, universal motor speed control, and heat control DEC's DB3/DB4 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's Absolute Ratings (Limiting Values) Electrical characteristics Symbols Value Units Power Dissipation on Printed Circuit(L=10mm) mW 150 Repetitive Peak on-state Current -40 to +125/-40 to 110 ℃ Pc ITRM Storage and Operating Junction Temperature TSTG/TJ 2.0 A TA=50℃ tp=10μs F=100Hz 2.0 Parameters DB3 DB4 Symbols Value Units Breakover Voltage (Note 2) V 5 Breakover Voltage Symmetry ±3 VBO | +VBO|- | - VBO| Dynamic Breakover Voltage (Note 1) |±△V| V C=22nF(Note2) See diagram 1 35 28 Parameters DB3 DB4 Min Typ Max 40 32 45 36 Max C=22nF(Note2) See diagram 1 V Test Conditions △I=(IBO to IF=10mA) See diagram 1 Min 5 Output Voltage (Note 1) VO V See diagram 2 Min 100 Breakover Current (Note 1) IBO μA C=22nF(Note2) Max 1.5 Rise Time (Note 1) tr μS See diagram 3 Typ 10 Leakage Current (Note 1) IB μA VB=0.5 VBO max see diagram 1 Max Notes: (1) Electrical characteristics applicable in both forward and reverse directions (2) Connected in parallel with the devices Dimensions in inches and (millimeters) DO-35(GLASS) 1.083(27.5) MIN. 1.083(27.5) MIN. 0.154(3.9) MAX. 0.020(0.52) MAX. DIA. 0.075(1.9) MAX. DIA. R-1 0.787(20.0) MIN. 0.787(20.0) MIN. 0.126(3.2) 0.106(2.7) 0.025(0.65) 0.021(0.55) DIA. 0.102(2.6) 0.091(2.3) DIA. |
Số phần tương tự - DB3 |
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Mô tả tương tự - DB3 |
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