CSD19536KCS datasheet(3/13 Pages) TI2

3 / 13 page

4 Specifications

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

100

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 80V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

2.1

2.5

3.2

RDS(on)

Drain-to-Source On-Resistance

VGS = 6V, ID = 100A

2.5

3.2

mΩ

VGS = 10V, ID = 100A

2.3

2.7

mΩ

gfs

Transconductance

VDS = 10V, ID = 100A

307

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 50V, ƒ = 1MHz

9250

12000

Coss

Output Capacitance

1820

2370

Crss

Reverse Transfer Capacitance

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (10V)

VDS = 50V, ID = 100A

118

153

Qgd

Gate Charge Gate to Drain

Qgs

Gate Charge Gate to Source

Qg(th)

Gate Charge at Vth

Qoss

Output Charge

VDS = 50V, VGS = 0V

335

td(on)

Turn On Delay Time

VDS = 50V, VGS = 10V,

IDS = 100A, RG = 0Ω

Rise Time

td(off)

Turn Off Delay Time

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 100A, VGS = 0V

0.9

1.1

Qrr

Reverse Recovery Charge

VDS= 50V, IF = 100A,

di/dt = 300A/μs

548

trr

Reverse Recovery Time

110

4.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.4

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

www.ti.com

CSD19536KCS

SLPS485C – JANUARY 2014 – REVISED MAY 2024

Submit Document Feedback

Product Folder Links: CSD19536KCS

CSD19536KCS bảng dữ liệu(PDF) 3 Page - Texas Instruments

CSD19536KCS bảng dữ liệu(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

bảng dữ liệu tải về

Link URL