5 Device and Documentation Support

5.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

5.2 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

5.3 Trademarks

NexFET™ and TI E2E™ are trademarks of Texas Instruments.

All trademarks are the property of their respective owners.

5.4 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

5.5 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

6 Revision History

Changes from Revision B (June 2023) to Revision C (March 2024)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

Changes from Revision A (December 2017) to Revision B (June 2023)

Page

• Updated Figure 4-10 ..........................................................................................................................................4

Changes from Revision * (March 2015) to Revision A (December 2017)

Page

• Updated Gate Charge curve ..............................................................................................................................1

• Changed COSS values From: TYP = 1700pF MAX = 2210pF To: TYP = 1410 pF MAX = 1840pF in Dynamic

Characteristics ...................................................................................................................................................3

• Changed Qg values From: TYP = 83nC MAX = 108nC To: TYP = 108nC MAX = 140nC in the Dynamic

Characteristics ...................................................................................................................................................3

• Changed Qg(th) value From: 12nC To: 17nC in the Dynamic Characteristics ....................................................3

• Changed td(on) value From: 8ns To: 11ns in Dynamic Characteristics. ..............................................................3

• Changed tr value From: 17ns To: 5ns in Dynamic Characteristics. ................................................................... 3

• Changed td(off) value From: 23ns To: 24ns in Dynamic Characteristics. ............................................................3

• Changed tf value From: 12ns To: 4ns in Dynamic Characteristics .................................................................... 3

• Updated Figure 4-4. ...........................................................................................................................................4

• Updated Figure 4-5 ............................................................................................................................................4

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CSD18536KCS

SLPS532C – JULY 2014 – REVISED MARCH 2024

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Product Folder Links: CSD18536KCS