CSD18535KCS.B datasheet(3/13 Pages) TI2

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4 Specifications

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 48V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

1.4

1.9

2.4

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5V, ID = 100A

2.3

2.9

mΩ

VGS = 10V, ID = 100A

1.6

2.0

mΩ

gfs

Transconductance

VDS = 6V, ID = 100A

263

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 30V, ƒ = 1MHz

5090

6620

Coss

Output Capacitance

890

1150

Crss

Reverse Transfer Capacitance

Series Gate Resistance

0.8

1.6

Ω

Gate Charge Total (10V)

VDS = 30V, ID = 100A

Qgd

Gate Charge Gate-to-Drain

10.4

Qgs

Gate Charge Gate-to-Source

15.7

Qg(th)

Gate Charge at Vth

9.4

Qoss

Output Charge

VDS = 30V, VGS = 0V

140

td(on)

Turn On Delay Time

VDS = 30V, VGS = 10V,

IDS = 100A, RG = 0Ω

Rise Time

td(off)

Turn Off Delay Time

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 100A, VGS = 0V

0.9

1.0

Qrr

Reverse Recovery Charge

VDS= 30V, IF = 100A,

di/dt = 300A/μs

214

trr

Reverse Recovery Time

4.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.5

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

www.ti.com

CSD18535KCS

SLPS531A – JULY 2014 – REVISED APRIL 2024

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