AM1011-500 datasheet(1/4 Pages) STMICROELECTRONICS

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RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.400 x .600 2L FL (M198)

hermetically sealed

.

POUT

= 500 W MIN. WITH 8.5 dB MIN.

GAIN

.

10:1 LOAD VSWR CAPABILITY @ 10

µS.,

1% DUTY

.

SIXPAC

™ HERMETIC METAL/CERAMIC

PACKAGE

.

EMITTER SITE BALLASTED OVERLAY

GEOMETRY

.

REFRACTORY/GOLD METALLIZATION

.

LOW THERMAL RESISTANCE

.

INTERNAL INPUT/OUTPUT MATCHING

.

CHARACTERIZED UNDER 32

µS.,2%

DUTY CYCLE PULSE CONDITIONS

DESCRIPTION

The AM1011-500 device is a high power Class C

transistor specifically designed for L-Band Av-

ionic applications involving high pulse burst duty

cycles.

This device is capable of operation over a wide

range of pulse widths, duty cycles, and tempera-

tures. Low RF thermal resistance and computer-

ized automatic wire bonding techniques ensure

high reliability and product consistency.

The AM1011-500 is supplied in the SIXPAC

™

Hermetic metal/ceramic package with internal in-

put/output matching structures.

PIN CONNECTION

BRANDING

1011-500

ORDER CODE

AM1011-500

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

1,360

W

IC

Device Current*

27

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.11

°C/W

*Applies only to rated RF amplifier operation

AM1011-500

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

Số phần tương tự - AM1011-500

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Advanced Semiconductor	AM1011-500	41Kb / 1P	NPN RF POWER TRANSISTOR

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