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AM1011-400 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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AM1011-400 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() September 1992 L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 15:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 400 W MIN. WITH 8.0 dB GAIN DESCRIPTION The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications. This device is designed for operation under moder- ate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding tech- niques ensure high reliability and product consist- ency. The AM1011-400 is supplied in the BIGPAC ™ Her- metic Metal/Ceramic package Input/Output match- ing structures. PIN CONNECTION BRANDING 1011-400 ORDER CODE AM1011-400 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 100°C) 880 W IC Device Current* 24 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.17 °C/W *Applies only to rated RF amplifier operation AM1011-400 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/6 |
Số phần tương tự - AM1011-400 |
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Mô tả tương tự - AM1011-400 |
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