TPS2100, TPS2101

VAUX POWER-DISTRIBUTION SWITCHES

SLVS197D – JUNE 1999 – REVISED JUNE 2000

13

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 22

230

205

180

–40

–20

0

20

40

255

280

IN1-OUT ON-STATE RESISTANCE

vs

JUNCTION TEMPERATURE

305

60

80

100

VI(INx) = 4 V

VI(INx) = 3.3 V

VI(INx) = 2.7 V

TJ Junction Temperature – °C

Figure 23

1.25

1

0.75

0.5

–40

–20

0

20

40

1.5

1.75

IN2-OUT ON-STATE RESISTANCE

vs

JUNCTION TEMPERATURE

2

60

80

100

VI(INx) = 4 V

VI(INx) = 3.3 V

VI(INx) = 2.7 V

TJ Junction Temperature – °C

APPLICATION INFORMATION

EN

IN1

IN2

OUT

GND

3.3 V VAUX

3.3 V VCC

CardBus or System Controller

TPS2100

0.1

µF

0.1

µF

0.1

µF

xx

µF

3.3 V

Figure 24. Typical Application

power supply considerations

A 0.01-

µF to 0.1-µF ceramic bypass capacitor between IN and GND, close to the device is recommended. The

output capacitor should be chosen based on the size of the load during the transition of the switch. A 47-

µF

capacitor is recommended for 10-mA loads. Typical output capacitors (xx

µF, shown in Figure 24) required for

a given load can be determined from Figure 16 which shows the output voltage droop when output is switched

from IN2 to IN1. The output voltage droop is insignificant when output is switched from IN1 to IN2. Additionally,

bypassing the output with a 0.01-

µF to 0.1-µF ceramic capacitor improves the immunity of the device to

short-circuit transients.