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TMP708 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TMP708 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 20 page ![]() 4 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com Product Folder Links: TMP708 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage Supply, VCC –0.3 6 V Input, SET and HYST –0.3 VCC + 0.3 Output, OT –0.3 6 Current Input 20 mA Output 20 Temperature Operating, TA –40 125 °C Junction, TJ 150 Storatge, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 Machine model (MM) ±200 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Supply voltage 2.7 5.5 V TA Operating temperature 0 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TMP708 UNIT DBV (SOT-23) 5 PINS RθJA Junction-to-ambient thermal resistance 217.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 86.3 °C/W RθJB Junction-to-board thermal resistance 44.6 °C/W ψJT Junction-to-top characterization parameter 4.4 °C/W ψJB Junction-to-board characterization parameter 43.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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