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PM6680ATR bảng dữ liệu(PDF) 34 Page - STMicroelectronics |
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PM6680ATR bảng dữ liệu(HTML) 34 Page - STMicroelectronics |
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34 / 48 page ![]() Design guidelines PM6680A 34/48 Equation 22 Choose a synchronous rectifier with low RDSon. When high side MOSFET turns on, the fast variation of the phase node voltage can bring up even the low side gate through its gate- drain capacitance CRSS, causing cross-conduction problems. Choose a low side MOSFET that minimizes the ratio CRSS/CGS (CGS = CISS - CRSS). Below there is a list of some possible low side MOSFETs. Dual n-channel MOSFETs can be used in applications with a maximum output current of about 3 A. Below there is a list of some MOSFET manufacturers. A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage clamp across the synchronous rectifier and reduces the negative inductor swing during the dead time between turning the high-side MOSFET off and the synchronous rectifier on. It can increase the efficiency of the switching section, since it reduces the low side switch losses. A shottky diode is suitable for its low forward voltage drop (0.3 V). The diode reverse voltage must be greater than the maximum input voltage VINmax. A minimum recovery reverse charge is preferable. Below there is a list of some shottky diode manufacturers. Table 10. Low side MOSFET manufacturer Manufacturer Type RDSon (mΩ) Rated reverse voltage (V) ST STS7NF60L [VC11] 19 0.0625 60 Table 14. Dual MOSFET manufacturer Manufacturer Type RDSon (mΩ) Gate charge (nC) Rated reverse voltage (V) ST STS4DNF60L 50 15 60 Table 15. Schottky diode manufacturer Manufacturer Series Forward voltage (V) Rated reverse voltage (V) Reverse current (uA) ST STPS1L40M 0.5 40 21 2 LOAD max IN OUT DSon conduction (max) I V V 1 R P × ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − × = C RSS C GS -------------- |
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